دیتاشیت BFU725F/N1,115

BFU725F

مشخصات دیتاشیت

نام دیتاشیت BFU725F
حجم فایل 140.199 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت BFU725F

BFU725F Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: NXP Semicon BFU725F/N1,115
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 25mA
  • Power Dissipation (Pd): 136mW
  • Transition Frequency (fT): 55GHz
  • DC Current Gain (hFE@Ic,Vce): 280@10mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 2.8V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
  • Package: SOT-343
  • Manufacturer: NXP Semicon
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
  • Base Part Number: BFU72
  • detail: RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO

دیتاشیت محصولات مشابه